Samsung develops DDR4 memory, up to 40% more efficient

Samsung Electronics has announced that it completed development of the industry’s first DDR4 DRAM module last month, using 30nm class process technology, and provided 1.2V 2GB DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing. The new DDR4 DRAM module can achieve data transfer rates of 2.133Gbps at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. In a notebook, the DDR4 module reduces power consumption by 40 percent compared to a 1.5V DDR3 module. Read the rest of this entry »